Researchers use LED defects to develop a new method to create efficient InGaN quantum dots
An international team of researchers from Singapore, the US and China, led by a team at Singapore-MIT alliance SMART, discovered a new way to generate long-wavelength (red, orange and yellow) emitting quantum dots by taking advantage of intrinsic defects in semiconducting materials.

The researchers fabricate InGaN QDs that feature a significantly higher indium concentration by making use of pre-existing defects in InGaN materials. In this process, the coalescence of so-called V-pits, which result from naturally-existing dislocations in the material, directly forms indium-rich quantum dots, small islands of material that emit longer-wavelength light. Simply put, the material forms itself in a structure that includes small 'pyramids' - the tops of which are actually light-emitting quantum dots.





